STD12NF06LT4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STD12NF06LT4
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 30 W 60 V Continuous Drain Current (ID):12 A 7.5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 2.4 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 12 A |
| Max Power Dissipation | 30 W |
| Power Dissipation | 30 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 350 pF |
| Continuous Drain Current (ID) | 12 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 35 ns |
| Dual Supply Voltage | 60 V |
| Gate Charge | 7.5 nC |
| Drain to Source Resistance | 100 mΩ |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
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