STD1NK60T4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STD1NK60T4
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 30 W 600 V Continuous Drain Current (ID):1 A 7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 8.5 Ω |
| Height | 2.4 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | TO-252-P032P |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 1 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 30 W |
| Power Dissipation | 30 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 156 pF |
| Continuous Drain Current (ID) | 1 A |
| Rds On Max | 8.5 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 6.5 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 5 ns |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 8 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2.25 V |
Stock: 1298
Distributors
pcbx
pcbxUnit Price$0.42518
Ext.Price$0.42518
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.42518 | $0.42518 |
| 10 | $0.39907 | $3.99070 |
| 25 | $0.37456 | $9.36400 |
| 50 | $0.35155 | $17.57750 |
| 100 | $0.32727 | $32.72700 |
| 300 | $0.30467 | $91.40100 |
| 500 | $0.28363 | $141.81500 |
| 1000 | $0.27480 | $274.80000 |
| 3000 | $0.26624 | $798.72000 |
| 5000 | $0.25794 | $1289.70000 |