STD1NK80ZT4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STD1NK80ZT4
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 45 W 800 V Continuous Drain Current (ID):1 A 7.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 16 Ω |
| Height | 2.4 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | TO-252-P032P |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 1 A |
| Max Power Dissipation | 45 W |
| Power Dissipation | 45 W |
| Threshold Voltage | 3.75 V |
| Number of Channels | 1 |
| Input capacitance | 160 pF |
| Continuous Drain Current (ID) | 1 A |
| Rds On Max | 16 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Fall Time | 55 ns |
| Rise Time | 30 ns |
| Gate Charge | 7.7 nC |
| Drain to Source Resistance | 13 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 1073
Distributors
pcbx
pcbxUnit Price$0.45398
Ext.Price$0.45398
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.45398 | $0.45398 |
| 10 | $0.35261 | $3.52610 |
| 25 | $0.31731 | $7.93275 |
| 50 | $0.28554 | $14.27700 |
| 100 | $0.25695 | $25.69500 |
| 300 | $0.24437 | $73.31100 |
| 500 | $0.23241 | $116.20500 |
| 1000 | $0.21874 | $218.74000 |