STD5N20LT4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STD5N20LT4
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 33 W 200 V Continuous Drain Current (ID):5 A 5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 700 mΩ |
| Height | 2.4 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 5 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 33 W |
| Power Dissipation | 33 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 242 pF |
| Continuous Drain Current (ID) | 5 A |
| Rds On Max | 700 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11.5 ns |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Single |
| Fall Time | 15.5 ns |
| Rise Time | 21.5 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 5 nC |
| Drain to Source Resistance | 650 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
Stock: 872
Distributors
pcbx
pcbxUnit Price$0.53078
Ext.Price$0.53078
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.53078 | $0.53078 |
| 10 | $0.47645 | $4.76450 |
| 25 | $0.45571 | $11.39275 |
| 50 | $0.43588 | $21.79400 |
| 100 | $0.41691 | $41.69100 |
| 300 | $0.40908 | $122.72400 |
| 500 | $0.40139 | $200.69500 |
| 1000 | $0.39537 | $395.37000 |