STD7NM80
Manufacturer:
STMicroelectronics
Mfr.Part #:
STD7NM80
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 90 W 800 V Continuous Drain Current (ID):6.5 A 18 nC
| Parameter | Value |
|---|---|
| Length | 6.6 mm |
| Width | 6.2 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.05 Ω |
| Height | 2.4 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 90 W |
| Power Dissipation | 90 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 620 pF |
| Continuous Drain Current (ID) | 6.5 A |
| Rds On Max | 1.05 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | 800 V |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 1.05 Ω |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 1238
Distributors
pcbx
pcbxUnit Price$2.18434
Ext.Price$2.18434
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.18434 | $2.18434 |
| 10 | $1.68336 | $16.83360 |
| 25 | $1.51733 | $37.93325 |
| 50 | $1.36768 | $68.38400 |
| 100 | $1.23281 | $123.28100 |
| 300 | $1.22982 | $368.94600 |
| 500 | $1.22683 | $613.41500 |
| 1000 | $1.11397 | $1113.97000 |
| 3000 | $1.06823 | $3204.69000 |
| 5000 | $1.02437 | $5121.85000 |
| 10000 | $0.98231 | $9823.10000 |