STFI9N60M2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STFI9N60M2
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 20 W 600 V Continuous Drain Current (ID):5.5 A 10 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Max Power Dissipation | 20 W |
| Power Dissipation | 20 W |
| Number of Channels | 1 |
| Input capacitance | 320 pF |
| Continuous Drain Current (ID) | 5.5 A |
| Rds On Max | 780 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 780 mΩ |
| Gate to Source Voltage (Vgs) | -25 V, 25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 4 V |
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