STGWT40H65DFB
Manufacturer:
STMicroelectronics
Mfr.Part #:
STGWT40H65DFB
Datasheet:
Description:
IGBTs TO-3P Through Hole Single 650 V 283 W 80 A
| Parameter | Value |
|---|---|
| Length | 15.8 mm |
| Width | 5 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.1 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 283 W |
| Power Dissipation | 283 W |
| Max Collector Current | 80 A |
| Collector Emitter Breakdown Voltage | 650 V |
| Reverse Recovery Time | 62 ns |
| Continuous Collector Current | 40 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V |
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