STGWT60H65DFB
Manufacturer:
STMicroelectronics
Mfr.Part #:
STGWT60H65DFB
Datasheet:
Description:
IGBTs TO-3P Through Hole Single 650 V 375 W 80 A
| Parameter | Value |
|---|---|
| Length | 15.8 mm |
| Width | 5 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.1 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 375 W |
| Power Dissipation | 375 W |
| Max Collector Current | 80 A |
| Collector Emitter Breakdown Voltage | 650 V |
| Reverse Recovery Time | 60 ns |
| Continuous Collector Current | 60 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V |
Stock: 222
Distributors
pcbx
pcbxUnit Price$2.97857
Ext.Price$2.97857
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.97857 | $2.97857 |
| 10 | $1.65856 | $16.58560 |
| 25 | $1.47119 | $36.77975 |
| 50 | $1.30499 | $65.24950 |
| 100 | $1.15757 | $115.75700 |
| 300 | $1.12774 | $338.32200 |
| 500 | $1.09868 | $549.34000 |
| 1000 | $1.07037 | $1070.37000 |