STH3N150-2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STH3N150-2
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 140 W 1.5 kV Continuous Drain Current (ID):2.5 A 29.3 nC
| Parameter | Value |
|---|---|
| Length | 10.4 mm |
| Width | 15.8 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Number of Pins | 3 |
| Height | 4.8 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | H2PAK-2-8159712 |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 140 W |
| Power Dissipation | 140 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 939 pF |
| Continuous Drain Current (ID) | 2.5 A |
| Rds On Max | 9 Ω |
| Drain to Source Voltage (Vdss) | 1.5 kV |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 24 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 61 ns |
| Rise Time | 47 ns |
| Gate Charge | 29.3 nC |
| Drain to Source Resistance | 6 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 1.5 kV |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 762
Distributors
pcbx
pcbxUnit Price$1.68259
Ext.Price$1.68259
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.68259 | $1.68259 |
| 10 | $1.40093 | $14.00930 |
| 25 | $1.28656 | $32.16400 |
| 50 | $1.18152 | $59.07600 |
| 100 | $1.08504 | $108.50400 |
| 300 | $1.04527 | $313.58100 |
| 500 | $1.00696 | $503.48000 |
| 1000 | $0.97175 | $971.75000 |