STH80N10F7-2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STH80N10F7-2
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 110 W 100 V Continuous Drain Current (ID):80 A 45 nC
| Parameter | Value |
|---|---|
| Length | 10.4 mm |
| Width | 9.17 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.8 mm |
| Packaging | Reel |
| RoHS | Compliant |
| Number of Elements | 2 |
| Lifecycle Status | NRND (Last Updated: 6 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Number of Channels | 1 |
| Input capacitance | 3.1 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 9.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 19 ns |
| Turn-Off Delay Time | 36 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 32 ns |
| Gate Charge | 45 nC |
| Drain to Source Resistance | 9.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 4.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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