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STI6N80K5

Manufacturer:

STMicroelectronics

Mfr.Part #:

STI6N80K5

Datasheet:
Description:

MOSFETs I2PAK Through Hole N-Channel number of channels:1 110 W 800 V Continuous Drain Current (ID):4.5 A 7.5 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
PackagingTube
RoHSCompliant
Number of Elements1
Lifecycle StatusProduction (Last Updated: 6 months ago)
Max Power Dissipation85 W
Power Dissipation110 W
Number of Channels1
Input capacitance255 pF
Continuous Drain Current (ID)4.5 A
Rds On Max1.6 Ω
Drain to Source Voltage (Vdss)800 V
FET Type(Transistor Polarity)N-Channel
Element ConfigurationSingle
Gate Charge7.5 nC
Drain to Source Resistance1.6 Ω
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)800 V
Gate to Source Threshold Voltage4 V

Stock: 6

Distributors
pcbx
Unit Price$1.19904
Ext.Price$1.19904
QtyUnit PriceExt.Price
1$1.19904$1.19904
10$0.98707$9.87070
25$0.92666$23.16650
50$0.86995$43.49750
100$0.74574$74.57400
300$0.71594$214.78200
500$0.68734$343.67000
1000$0.66047$660.47000