STGWT80H65DFB
Manufacturer:
STMicroelectronics
Mfr.Part #:
STGWT80H65DFB
Datasheet:
Description:
IGBTs TO-3P Through Hole Single 650 V 469 W 120 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 469 W |
| Max Collector Current | 120 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V |
| Maximum Gate Emitter Voltage | -20 V, 20 V |
Stock: 64
Distributors
pcbx
pcbxUnit Price$4.34903
Ext.Price$4.34903
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.34903 | $4.34903 |
| 10 | $2.50323 | $25.03230 |
| 25 | $2.24105 | $56.02625 |
| 50 | $2.00633 | $100.31650 |
| 100 | $1.79620 | $179.62000 |
| 300 | $1.78677 | $536.03100 |
| 500 | $1.77740 | $888.70000 |