STGWT80H65DFB
Manufacturer:
STMicroelectronics
Mfr.Part #:
STGWT80H65DFB
Datasheet:
Description:
IGBTs TO-3P Through Hole Single 650 V 469 W 120 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 469 W |
| Max Collector Current | 120 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V |
| Maximum Gate Emitter Voltage | -20 V, 20 V |
Stock: 71
Distributors
pcbx
pcbxUnit Price$4.41827
Ext.Price$4.41827
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.41827 | $4.41827 |
| 10 | $2.54085 | $25.40850 |
| 25 | $2.27632 | $56.90800 |
| 50 | $2.03933 | $101.96650 |
| 100 | $1.82699 | $182.69900 |
| 300 | $1.82100 | $546.30000 |
| 500 | $1.81501 | $907.50500 |