STN1NK80Z
Manufacturer:
STMicroelectronics
Mfr.Part #:
STN1NK80Z
Datasheet:
Description:
MOSFETs SOT-223-4 SMD/SMT N-Channel number of channels:1 2.5 W 800 V Continuous Drain Current (ID):250 mA 7.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Length | 6.5 mm |
| Width | 3.5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 16 Ω |
| Height | 1.8 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 250 mA |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 3.75 V |
| Number of Channels | 1 |
| Input capacitance | 160 pF |
| Continuous Drain Current (ID) | 250 mA |
| Rds On Max | 16 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Fall Time | 55 ns |
| Rise Time | 30 ns |
| Gate Charge | 7.7 nC |
| Drain to Source Resistance | 16 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 22545
Distributors
pcbx
pcbxUnit Price$0.30106
Ext.Price$0.30106
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.30106 | $0.30106 |
| 10 | $0.26255 | $2.62550 |
| 50 | $0.22896 | $11.44800 |
| 100 | $0.19207 | $19.20700 |
| 500 | $0.16112 | $80.56000 |
| 1000 | $0.14735 | $147.35000 |
| 3000 | $0.13475 | $404.25000 |