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STP15NM60ND

Manufacturer:

STMicroelectronics

Mfr.Part #:

STP15NM60ND

Datasheet:
Description:

MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 125 W 600 V Continuous Drain Current (ID):14 A 40 nC

ParameterValue
Length10.4 mm
Width4.6 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance299 mΩ
Height15.75 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation125 W
Power Dissipation125 W
Threshold Voltage4 V
Number of Channels1
Input capacitance1.25 nF
Continuous Drain Current (ID)14 A
Rds On Max299 mΩ
Drain to Source Voltage (Vdss)600 V
Turn-On Delay Time17 ns
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Fall Time28 ns
Rise Time20 ns
Gate Charge40 nC
Drain to Source Resistance299 mΩ
Gate to Source Voltage (Vgs)25 V
Drain to Source Breakdown Voltage (Vds)600 V
Gate to Source Threshold Voltage5 V
FET Type(Transistor Polarity)N-Channel

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