STP26N65DM2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP26N65DM2
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 170 W 650 V Continuous Drain Current (ID):20 A 35.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Power Dissipation | 170 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 20 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 35.5 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | -25 V, 25 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 3 V |
Stock: 530
Distributors
pcbx
pcbxUnit Price$2.60943
Ext.Price$2.60943
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.60943 | $2.60943 |
| 10 | $1.71689 | $17.16890 |
| 25 | $1.52779 | $38.19475 |
| 50 | $1.35952 | $67.97600 |
| 100 | $1.20978 | $120.97800 |
| 300 | $1.09626 | $328.87800 |
| 500 | $0.99339 | $496.69500 |
| 1000 | $0.92389 | $923.89000 |