STP33N60DM6
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP33N60DM6
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 190 W 600 V Continuous Drain Current (ID):25 A 35 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Power Dissipation | 190 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 25 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 128 mΩ |
| Gate to Source Voltage (Vgs) | 3.25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3.25 V |
Stock: 1
Distributors
pcbx
pcbxUnit Price$2.61283
Ext.Price$2.61283
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.61283 | $2.61283 |
| 10 | $2.20234 | $22.02340 |
| 25 | $2.02011 | $50.50275 |
| 50 | $1.85295 | $92.64750 |
| 100 | $1.69963 | $169.96300 |
| 300 | $1.63864 | $491.59200 |
| 500 | $1.57984 | $789.92000 |
| 1000 | $1.52891 | $1528.91000 |