STP33N60M2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP33N60M2
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 190 W 600 V Continuous Drain Current (ID):26 A 45.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 190 W |
| Power Dissipation | 190 W |
| Number of Channels | 1 |
| Input capacitance | 1.781 nF |
| Continuous Drain Current (ID) | 26 A |
| Rds On Max | 125 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 109 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9.6 ns |
| Gate Charge | 45.5 nC |
| Drain to Source Resistance | 108 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 222
Distributors
pcbx
pcbxUnit Price$2.93497
Ext.Price$2.93497
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.93497 | $2.93497 |
| 10 | $1.51408 | $15.14080 |
| 25 | $1.47998 | $36.99950 |
| 50 | $1.44665 | $72.33250 |
| 100 | $1.41406 | $141.40600 |
| 300 | $1.28647 | $385.94100 |
| 500 | $1.17040 | $585.20000 |
| 1000 | $1.08234 | $1082.34000 |