STP36N55M5
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP36N55M5
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 190 W 550 V Continuous Drain Current (ID):33 A 72 nC
| Parameter | Value |
|---|---|
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 15.75 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | NRND (Last Updated: 6 months ago) |
| Max Power Dissipation | 190 W |
| Power Dissipation | 190 W |
| Number of Channels | 1 |
| Input capacitance | 2.67 nF |
| Continuous Drain Current (ID) | 33 A |
| Rds On Max | 80 mΩ |
| Drain to Source Voltage (Vdss) | 550 V |
| Turn-On Delay Time | 56 ns |
| Turn-Off Delay Time | 56 ns |
| Element Configuration | Single |
| Gate Charge | 72 nC |
| Drain to Source Resistance | 80 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | 550 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 5 V |
| FET Type(Transistor Polarity) | N-Channel |
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