STP4N150
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP4N150
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 160 W 1.5 kV Continuous Drain Current (ID):4 A 50 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 1.5 kV |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 7 Ω |
| Height | 15.75 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 4 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 160 W |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.3 nF |
| Continuous Drain Current (ID) | 4 A |
| Rds On Max | 7 Ω |
| Drain to Source Voltage (Vdss) | 1.5 kV |
| Turn-On Delay Time | 35 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 45 ns |
| Rise Time | 30 ns |
| Gate Charge | 50 nC |
| Drain to Source Resistance | 5 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 1.5 kV |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 130
Distributors
pcbx
pcbxUnit Price$3.61968
Ext.Price$3.61968
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.61968 | $3.61968 |
| 10 | $3.13046 | $31.30460 |
| 25 | $2.97355 | $74.33875 |
| 50 | $2.82451 | $141.22550 |
| 100 | $2.53723 | $253.72300 |
| 300 | $2.46426 | $739.27800 |
| 500 | $2.39338 | $1196.69000 |
| 1000 | $2.33217 | $2332.17000 |