STP5N60M2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP5N60M2
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 45 W 600 V Continuous Drain Current (ID):3.7 A 4.5 nC
| Parameter | Value |
|---|---|
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 15.75 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Max Power Dissipation | 45 W |
| Power Dissipation | 45 W |
| Number of Channels | 1 |
| Input capacitance | 165 pF |
| Continuous Drain Current (ID) | 3.7 A |
| Rds On Max | 1.4 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 11.8 ns |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Gate Charge | 4.5 nC |
| Drain to Source Resistance | 1.26 Ω |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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