STP6N120K3
Manufacturer:
STMicroelectronics
Mfr.Part #:
STP6N120K3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 150 W 1.2 kV Continuous Drain Current (ID):6 A 34 nC
| Parameter | Value |
|---|---|
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.95 Ω |
| Height | 14.9 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 150 W |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.05 nF |
| Continuous Drain Current (ID) | 6 A |
| Rds On Max | 2.4 Ω |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Turn-On Delay Time | 30 ns |
| Turn-Off Delay Time | 58 ns |
| Element Configuration | Single |
| Fall Time | 32 ns |
| Rise Time | 12 ns |
| Gate Charge | 34 nC |
| Drain to Source Resistance | 1.95 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 1.2 kV |
| Gate to Source Threshold Voltage | -30 V, 30 V |
| FET Type(Transistor Polarity) | N-Channel |
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