STS9P2UH7
Manufacturer:
STMicroelectronics
Mfr.Part #:
STS9P2UH7
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.7 W 20 V Continuous Drain Current (ID):9 A 22 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| RoHS | Compliant |
| Max Power Dissipation | 2.7 W |
| Power Dissipation | 2.7 W |
| Number of Channels | 1 |
| Input capacitance | 2.39 nF |
| Continuous Drain Current (ID) | 9 A |
| Rds On Max | 22.5 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 12.5 ns |
| Turn-Off Delay Time | 128 ns |
| Element Configuration | Single |
| Fall Time | 84.5 ns |
| Rise Time | 30.5 ns |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 22.5 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 400 mV |
| FET Type(Transistor Polarity) | P-Channel |
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