STU16N60M2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STU16N60M2
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 110 W 600 V Continuous Drain Current (ID):12 A 19 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | NRND (Last Updated: 6 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Number of Channels | 1 |
| Input capacitance | 700 pF |
| Continuous Drain Current (ID) | 12 A |
| Rds On Max | 320 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 19 nC |
| Drain to Source Resistance | 320 mΩ |
| Gate to Source Voltage (Vgs) | -25 V, 25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
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