STW10NK80Z
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW10NK80Z
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 160 W 800 V Continuous Drain Current (ID):9 A 72 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 900 mΩ |
| Height | 20.15 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 9 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 160 W |
| Power Dissipation | 160 W |
| Threshold Voltage | 3.75 V |
| Number of Channels | 1 |
| Input capacitance | 2.18 nF |
| Continuous Drain Current (ID) | 9 A |
| Rds On Max | 900 mΩ |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 30 ns |
| Turn-Off Delay Time | 65 ns |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Rise Time | 20 ns |
| Gate Charge | 72 nC |
| Drain to Source Resistance | 900 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 6
Distributors
pcbx
pcbxUnit Price$3.45802
Ext.Price$3.45802
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.45802 | $3.45802 |
| 10 | $3.38093 | $33.80930 |
| 25 | $3.30974 | $82.74350 |
| 50 | $3.24005 | $162.00250 |
| 100 | $3.17180 | $317.18000 |