STW11NK100Z
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW11NK100Z
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 230 W 1 kV Continuous Drain Current (ID):8.3 A 113 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 1 kV |
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.38 Ω |
| Height | 20.15 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 8.3 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 230 W |
| Power Dissipation | 230 W |
| Threshold Voltage | 3.75 V |
| Number of Channels | 1 |
| Input capacitance | 3.5 nF |
| Continuous Drain Current (ID) | 8.3 A |
| Rds On Max | 1.38 Ω |
| Drain to Source Voltage (Vdss) | 1 kV |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 27 ns |
| Turn-Off Delay Time | 98 ns |
| Element Configuration | Single |
| Fall Time | 55 ns |
| Rise Time | 18 ns |
| Gate Charge | 113 nC |
| Drain to Source Resistance | 1.38 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 1 kV |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 2050
Distributors
pcbx
pcbxUnit Price$2.56564
Ext.Price$2.56564
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.56564 | $2.56564 |
| 10 | $1.99626 | $19.96260 |
| 25 | $1.95790 | $48.94750 |
| 50 | $1.92028 | $96.01400 |
| 100 | $1.88341 | $188.34100 |
| 300 | $1.87339 | $562.01700 |
| 500 | $1.86342 | $931.71000 |
| 1000 | $1.85350 | $1853.50000 |
| 3000 | $1.84364 | $5530.92000 |
| 5000 | $1.83383 | $9169.15000 |