STW11NM80
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW11NM80
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 150 W 800 V Continuous Drain Current (ID):11 A 43.6 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Resistance | 400 mΩ |
| Height | 20.15 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 11 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 150 W |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.63 nF |
| Continuous Drain Current (ID) | 11 A |
| Rds On Max | 400 mΩ |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 22 ns |
| Turn-Off Delay Time | 46 ns |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Rise Time | 17 ns |
| Gate Charge | 43.6 nC |
| Drain to Source Resistance | 400 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 942
Distributors
pcbx
pcbxUnit Price$4.11136
Ext.Price$4.11136
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.11136 | $4.11136 |
| 10 | $1.81501 | $18.15010 |
| 25 | $1.77002 | $44.25050 |
| 50 | $1.72614 | $86.30700 |
| 100 | $1.68336 | $168.33600 |
| 300 | $1.66747 | $500.24100 |
| 500 | $1.65173 | $825.86500 |