STW19NM60N
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW19NM60N
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 110 W 600 V Continuous Drain Current (ID):13 A 35 nC
| Parameter | Value |
|---|---|
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.15 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Number of Channels | 1 |
| Input capacitance | 1 nF |
| Continuous Drain Current (ID) | 13 A |
| Rds On Max | 285 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 15 ns |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 260 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
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