STW20NM50FD
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW20NM50FD
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 214 W 500 V Continuous Drain Current (ID):20 A 53 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 500 V |
| Length | 38.1 mm |
| Width | 19.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Resistance | 250 mΩ |
| Height | 6.35 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 20 A |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Max Power Dissipation | 214 W |
| Power Dissipation | 214 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.38 nF |
| Continuous Drain Current (ID) | 20 A |
| Rds On Max | 250 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 22 ns |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Rise Time | 20 ns |
| Gate Charge | 53 nC |
| Drain to Source Resistance | 250 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
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