
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Resistance | 299 MΩ |
| Height | 24.45 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 250 W |
| Power Dissipation | 250 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.645 nF |
| Continuous Drain Current (ID) | 18.5 A |
| Rds On Max | 299 mΩ |
| Drain to Source Voltage (Vdss) | 900 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 52 ns |
| Fall Time | 40 ns |
| Rise Time | 27 ns |
| Gate Charge | 43 nC |
| Drain to Source Resistance | 250 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 900 V |
| Gate to Source Threshold Voltage | 3 V |
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