STW42N65M5
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW42N65M5
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 190 W 650 V Continuous Drain Current (ID):33 A 98 nC
| Parameter | Value |
|---|---|
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 79 mΩ |
| Height | 20.15 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | STW42N65M5 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 190 W |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 4.65 nF |
| Continuous Drain Current (ID) | 33 A |
| Rds On Max | 79 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 61 ns |
| Turn-Off Delay Time | 65 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 24 ns |
| Gate Charge | 98 nC |
| Drain to Source Resistance | 70 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 353
Distributors
pcbx
pcbxUnit Price$5.70751
Ext.Price$5.70751
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $5.70751 | $5.70751 |
| 10 | $3.35474 | $33.54740 |
| 25 | $3.33583 | $83.39575 |
| 50 | $3.31702 | $165.85100 |
| 100 | $3.29832 | $329.83200 |
| 300 | $3.25384 | $976.15200 |
| 500 | $3.20996 | $1604.98000 |
| 1000 | $3.16666 | $3166.66000 |