STW4N150
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW4N150
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 160 W 1.5 kV Continuous Drain Current (ID):4 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 1.5 kV |
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 7 Ω |
| Height | 20.15 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 4 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 160 W |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.3 nF |
| Continuous Drain Current (ID) | 4 A |
| Rds On Max | 7 Ω |
| Drain to Source Voltage (Vdss) | 1.5 kV |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 35 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 45 ns |
| Rise Time | 30 ns |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 7 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 1.5 kV |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
Stock: 441
Distributors
pcbx
pcbxUnit Price$1.63757
Ext.Price$1.63757
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.63757 | $1.63757 |
| 10 | $1.40016 | $14.00160 |
| 25 | $1.28899 | $32.22475 |
| 50 | $1.18664 | $59.33200 |
| 100 | $1.09241 | $109.24100 |
| 300 | $1.05747 | $317.24100 |
| 500 | $1.02364 | $511.82000 |
| 1000 | $0.99309 | $993.09000 |