STW63N65DM2
Manufacturer:
STMicroelectronics
Mfr.Part #:
STW63N65DM2
Datasheet:
Description:
MOSFETs TO-247 Through Hole N-Channel number of channels:1 446 W 650 V Continuous Drain Current (ID):60 A 120 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Power Dissipation | 446 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 60 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 120 nC |
| Drain to Source Resistance | 50 mΩ |
| Gate to Source Voltage (Vgs) | -25 V, 25 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 3 V |
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