SUD19N20-90-E3
Manufacturer:
Vishay
Mfr.Part #:
SUD19N20-90-E3
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 3 W 200 V Continuous Drain Current (ID):19 A 34 nC
| Parameter | Value |
|---|---|
| Length | 6.73 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 90 mΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 200 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 19 A |
| Max Power Dissipation | 3 W |
| Power Dissipation | 3 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.8 nF |
| Continuous Drain Current (ID) | 19 A |
| Rds On Max | 90 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Rise Time | 50 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 34 nC |
| Drain to Source Resistance | 90 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 903
Distributors
pcbx
pcbxUnit Price$1.20801
Ext.Price$1.20801
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.20801 | $1.20801 |
| 10 | $1.03276 | $10.32760 |
| 25 | $0.99583 | $24.89575 |
| 50 | $0.96022 | $48.01100 |
| 100 | $0.92589 | $92.58900 |
| 300 | $0.91341 | $274.02300 |
| 500 | $0.90110 | $450.55000 |
| 1000 | $0.89511 | $895.11000 |
| 3000 | $0.84666 | $2539.98000 |
| 5000 | $0.80083 | $4004.15000 |
| 10000 | $0.75747 | $7574.70000 |