Si2308BDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
Si2308BDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.09 W 60 V Continuous Drain Current (ID):2.3 A 2.3 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Power Dissipation | 1.09 W |
| Number of Channels | 1 |
| Input capacitance | 190 pF |
| Continuous Drain Current (ID) | 2.3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 2.3 nC |
| Drain to Source Resistance | 130 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
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