TK100E10N1,S1X(S
Manufacturer:
Toshiba
Mfr.Part #:
TK100E10N1,S1X(S
Datasheet:
Description:
MOSFETs TO-220 Through Hole P-Channel number of channels:1 255 W 100 V Continuous Drain Current (ID):100 A 140 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 255 W |
| Number of Channels | 1 |
| Input capacitance | 8.8 nF |
| Continuous Drain Current (ID) | 100 A |
| FET Type(Transistor Polarity) | P-Channel |
| Gate Charge | 140 nC |
| Drain to Source Resistance | 3.4 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 74
Distributors
pcbx
pcbxUnit Price$1.18378
Ext.Price$1.18378
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.18378 | $1.18378 |
| 10 | $0.98246 | $9.82460 |
| 25 | $0.89437 | $22.35925 |
| 50 | $0.81418 | $40.70900 |
| 100 | $0.69675 | $69.67500 |
| 300 | $0.66808 | $200.42400 |
| 500 | $0.64059 | $320.29500 |
| 1000 | $0.61624 | $616.24000 |