TK10A60D
Manufacturer:
Toshiba
Mfr.Part #:
TK10A60D
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel 45 W 25 V Continuous Drain Current (ID):10 A 25 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 45 W |
| Input capacitance | 1.35 nF |
| Continuous Drain Current (ID) | 10 A |
| Turn-On Delay Time | 55 ns |
| Turn-Off Delay Time | 100 ns |
| Rise Time | 22 ns |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 750 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Gate to Source Threshold Voltage | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
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