TK14G65W,RQ
Manufacturer:
Toshiba
Mfr.Part #:
TK14G65W,RQ
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 130 W 650 V Continuous Drain Current (ID):13.7 A 35 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Max Power Dissipation | 130 W |
| Power Dissipation | 130 W |
| Number of Channels | 1 |
| Input capacitance | 1.3 nF |
| Continuous Drain Current (ID) | 13.7 A |
| Rds On Max | 250 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 250 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 3.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 997
Distributors
pcbx
pcbxUnit Price$1.77740
Ext.Price$1.77740
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.77740 | $1.77740 |
| 10 | $1.27641 | $12.76410 |
| 25 | $1.16494 | $29.12350 |
| 50 | $1.06320 | $53.16000 |
| 100 | $0.97034 | $97.03400 |
| 300 | $0.95743 | $287.22900 |
| 500 | $0.94470 | $472.35000 |
| 1000 | $0.78226 | $782.26000 |