TK55S10N1,LQ
Manufacturer:
Toshiba
Mfr.Part #:
TK55S10N1,LQ
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 100 W 100 V Continuous Drain Current (ID):55 A 49 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Weight | 3.949996 g |
| Max Power Dissipation | 157 W |
| Power Dissipation | 100 W |
| Number of Channels | 1 |
| Input capacitance | 3.28 nF |
| Continuous Drain Current (ID) | 55 A |
| Rds On Max | 6.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 51 ns |
| Element Configuration | Single |
| Rise Time | 11 ns |
| Gate Charge | 49 nC |
| Drain to Source Resistance | 5.5 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 988
Distributors
pcbx
pcbxUnit Price$2.22794
Ext.Price$2.22794
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.22794 | $2.22794 |
| 10 | $1.48330 | $14.83300 |
| 25 | $1.31973 | $32.99325 |
| 50 | $1.17420 | $58.71000 |
| 100 | $1.04473 | $104.47300 |
| 300 | $0.98033 | $294.09900 |
| 500 | $0.91990 | $459.95000 |
| 1000 | $0.85151 | $851.51000 |