TK62N60W5,S1VF(S
Manufacturer:
Toshiba
Mfr.Part #:
TK62N60W5,S1VF(S
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 400 W 600 V Continuous Drain Current (ID):61.8 A 205 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 400 W |
| Number of Channels | 1 |
| Input capacitance | 6.5 nF |
| Continuous Drain Current (ID) | 61.8 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 205 nC |
| Drain to Source Resistance | 36 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V to 4.5 V |
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