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TN0110N3-G

Manufacturer:

Microchip

Mfr.Part #:

TN0110N3-G

Datasheet:
Description:

MOSFETs TO-92-3 Through Hole N-Channel number of channels:1 1 W 100 V Continuous Drain Current (ID):350 mA

ParameterValue
Length5.21 mm
Width4.19 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height5.33 mm
PackagingBulk
Radiation HardeningNo
RoHSCompliant
Number of Elements1
Lifecycle StatusProduction (Last Updated: 4 months ago)
Max Power Dissipation1 W
Power Dissipation1 W
Number of Channels1
Input capacitance60 pF
Continuous Drain Current (ID)350 mA
Rds On Max3 Ω
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time2 ns
Turn-Off Delay Time6 ns
Element ConfigurationSingle
Fall Time3 ns
Rise Time3 ns
Drain to Source Resistance3 Ω
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage600 mV
FET Type(Transistor Polarity)N-Channel

Stock: 3558

Distributors
pcbx
Unit Price$0.78824
Ext.Price$0.78824
QtyUnit PriceExt.Price
1$0.78824$0.78824
10$0.71987$7.19870
25$0.65744$16.43600
50$0.62501$31.25050
100$0.59417$59.41700