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HN1A01FE-Y,LF

Manufacturer:

Toshiba

Mfr.Part #:

HN1A01FE-Y,LF

Datasheet:
Description:

BJTs SOT-666 SMD/SMT 2 PNP (Dual) 100 mW Collector Base Voltage (VCBO):-50 V Collector Emitter Voltage (VCEO):300 mV Emitter Base Voltage (VEBO):-5 V

ParameterValue
Length1.6 mm
Width1.2 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Height550 µm
PackagingReel
RoHSCompliant
PolarityPNP
Output Current1.4 A
Max Power Dissipation100 mW
Power Dissipation100 mW
Max Collector Current150 mA
Collector Emitter Breakdown Voltage50 V
Transition Frequency80 MHz
Continuous Collector Current-150 mA
Collector Emitter Voltage (VCEO)300 mV
Max Breakdown Voltage50 V
Gain Bandwidth Product80 MHz
Collector Base Voltage (VCBO)-50 V
Collector Emitter Saturation Voltage-100 mV
Emitter Base Voltage (VEBO)-5 V
hFE Min120
Max Cutoff Collector Current100 nA
Transistor Type2 PNP (Dual)

Stock: 15

Distributors
pcbx
Unit Price$0.08726
Ext.Price$0.08726
QtyUnit PriceExt.Price
1$0.08726$0.08726
10$0.07820$0.78200
50$0.07008$3.50400
100$0.06241$6.24100
500$0.05558$27.79000
1000$0.05022$50.22000
3000$0.04537$136.11000