
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 3.1 W |
| Number of Channels | 2 |
| Input capacitance | 665 pF |
| Continuous Drain Current (ID) | 5.3 A |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 26 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | 1 V to 3 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
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