UTT80N10
Manufacturer:
VBsemi
Mfr.Part #:
UTT80N10
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 250 W 100 V Continuous Drain Current (ID):100 A 160 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 250 W |
| Number of Channels | 1 |
| Input capacitance | 6.5 nF |
| Continuous Drain Current (ID) | 100 A |
| Gate Charge | 160 nC |
| Drain to Source Resistance | 8.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||