
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Power Dissipation | 6.1 W, 5.2 W |
| Number of Channels | 1 |
| Input capacitance | 1.32 nF |
| Continuous Drain Current (ID) | 9 A |
| Gate Charge | 13.3 nC |
| Drain to Source Resistance | 15 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Gate to Source Threshold Voltage | -0.9 V to -2 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
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