VBE1101N
Manufacturer:
VBsemi
Mfr.Part #:
VBE1101N
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 210 W 100 V Continuous Drain Current (ID):85 A 105 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Power Dissipation | 210 W |
| Number of Channels | 1 |
| Input capacitance | 4.55 nF |
| Continuous Drain Current (ID) | 85 A |
| Gate Charge | 105 nC |
| Drain to Source Resistance | 7.5 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 1 V to 3 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 6
Distributors
pcbx
pcbxUnit Price$1.00810
Ext.Price$1.00810
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.00810 | $1.00810 |
| 10 | $0.82416 | $8.24160 |
| 25 | $0.76024 | $19.00600 |
| 50 | $0.70128 | $35.06400 |
| 100 | $0.64689 | $64.68900 |
| 300 | $0.58463 | $175.38900 |
| 500 | $0.52836 | $264.18000 |
| 1000 | $0.50052 | $500.52000 |