VBE16R02
Manufacturer:
VBsemi
Mfr.Part #:
VBE16R02
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 42 W 600 V Continuous Drain Current (ID):2 A 18 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Power Dissipation | 42 W |
| Number of Channels | 1 |
| Input capacitance | 350 pF |
| Continuous Drain Current (ID) | 2 A |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 4.4 Ω |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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