VBE2610N
Manufacturer:
VBsemi
Mfr.Part #:
VBE2610N
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT P-Channel number of channels:1 34 W 60 V Continuous Drain Current (ID):-30 A 10 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Power Dissipation | 34 W |
| Number of Channels | 1 |
| Input capacitance | 1 nF |
| Continuous Drain Current (ID) | -30 A |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 61 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | -1 V to -3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 48
Distributors
pcbx
pcbxUnit Price$0.52714
Ext.Price$0.52714
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.52714 | $0.52714 |
| 10 | $0.42902 | $4.29020 |
| 25 | $0.39481 | $9.87025 |
| 50 | $0.36333 | $18.16650 |
| 100 | $0.33436 | $33.43600 |
| 300 | $0.30705 | $92.11500 |
| 500 | $0.28198 | $140.99000 |
| 1000 | $0.26636 | $266.36000 |