VBFB2102M
Manufacturer:
VBsemi
Mfr.Part #:
VBFB2102M
Datasheet:
Description:
MOSFETs TO-251 Through Hole P-Channel number of channels:1 32.1 W -100 V Continuous Drain Current (ID):-12 A 23 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 32.1 W |
| Number of Channels | 1 |
| Input capacitance | 1.055 nF |
| Continuous Drain Current (ID) | -12 A |
| FET Type(Transistor Polarity) | P-Channel |
| Gate Charge | 23 nC |
| Drain to Source Resistance | 215 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| Gate to Source Threshold Voltage | -1 V to -2.5 V |
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