VBM1101N
Manufacturer:
VBsemi
Mfr.Part #:
VBM1101N
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel 250 W 100 V Continuous Drain Current (ID):100 A 160 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Power Dissipation | 250 W |
| Input capacitance | 6.55 nF |
| Continuous Drain Current (ID) | 100 A |
| Gate Charge | 160 nC |
| Drain to Source Resistance | 85 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 3.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 159
Distributors
pcbx
pcbxUnit Price$1.00522
Ext.Price$1.00522
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.00522 | $1.00522 |
| 10 | $0.82493 | $8.24930 |
| 25 | $0.73562 | $18.39050 |
| 50 | $0.65597 | $32.79850 |
| 100 | $0.57249 | $57.24900 |
| 300 | $0.54450 | $163.35000 |
| 500 | $0.51788 | $258.94000 |
| 1000 | $0.49063 | $490.63000 |