VBM1102N
Manufacturer:
VBsemi
Mfr.Part #:
VBM1102N
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 335 mW 100 V Continuous Drain Current (ID):70 A 90 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 335 mW |
| Number of Channels | 1 |
| Input capacitance | 1.5 nF |
| Continuous Drain Current (ID) | 70 A |
| Gate Charge | 90 nC |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4
Distributors
pcbx
pcbxUnit Price$0.74611
Ext.Price$0.74611
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.74611 | $0.74611 |
| 10 | $0.60576 | $6.05760 |
| 25 | $0.55165 | $13.79125 |
| 50 | $0.50237 | $25.11850 |
| 100 | $0.43669 | $43.66900 |
| 300 | $0.41501 | $124.50300 |
| 500 | $0.39440 | $197.20000 |
| 1000 | $0.37326 | $373.26000 |